Study of the effects of gamma radiation on the optical properties of two-dimensional WS2 and MoS2-based dichalcogenides
Raman, dichalcogenides, WS2, MoS2, Gama radiation
Due to their optical and electrical properties like semiconductor materials, two-dimensional transition metal dichalcogenides have aroused great interest in the optoelectronic industry. For example, twodimensional MoS2 and WS2 have been used to produce solar cells and phototransistors. However, due to their monolayer structure, the performance of these devices is generally affected by the environment in which they are inserted, such as radiation, atmosphere, air, etc. Therefore, this work intends to study the effects of gamma radiation on the optical properties of dichalcogenides based on WS2, grown by van der Waals epitaxy (VdWE) on Si substrates, coated with SiO2 and MoS2 grown by self-assembly (LbL) on aluminum substrate. In this study, WS2 and MoS2 films will be subjected to different doses of gamma radiation and subsequently analyzed by photoluminescence spectroscopy and spectrally and spatially resolved Raman spectroscopy. Preliminary results showed that gamma radiation does not act homogeneously along the grown film. In addition, it was verified that the optical and vibrational properties are strongly dependent on the incident radiation dose.